Hiroshi amano nobel prize
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Hiroshi Amano
Japanese physicist, engineer and inventor
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Hiroshi Amano (天野 浩, Amano Hiroshi, born September 11, 1960) is a Japanese physicist, engineer and inventor specializing in the field of semiconductor technology. For his work he was awarded the 2014 Nobel Prize in Physics together with Isamu Akasaki and Shuji Nakamura for "the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources".[2]
Amano was elected as a member of the National Academy of Engineering in 2016 for the development of p-type gallium nitride (GaN) doping, enabling blue semiconductor LEDs.
Early life and education
Amano was born in Hamamatsu, Japan, on September 11, 1960. He received his BE, ME and DE degree in 1983, 1985 and 1989, respectively, from Nagoya University.
During elementary school days, he played soccer as a goalkeeper and softball as a catcher. He was also passionate about amateur radio and despite hating studying, he was good at math
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Hiroshi Amano
Also published under: H. Amano
Affiliation
Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan
Publication Topics
P-n Junction,Gallium Nitride,Secondary Ion Mass Spectrometry,Depletion Region,Diffusion Profiles,Frequency Range,High Electric Field,High Electron Mobility Transistors,Ideality Factor,Impact Ionization,Low Voltage,Metal Organic Vapor Phase Epitaxy,Oscillation Frequency,Output Power,P-n Diode,Peak Output Power,Power Devices,Saturation Velocity,Terahertz,Thermionic Emission,2nd Order,3rd Order,Accurate Signal,Activation Energy,Additional Term,Admissible Values,Aluminum Nitride,Anritsu,Arrhenius Plot,Atomic Layer Deposition,Barrier Height,Breakdown Electric Field,Broadband Frequency,Capacitance Voltage,Capacity Density,Carrier Generation,Carrier Transport Properties,Charge Concentration,Chemical Vapor Deposition,Circuit Elements,Circuit Model,Contact Layer,Contact Resistance,Critical Current,Critical Electric Field,Current Source,Current Voltage,Dependent Current Source,Device Fabrication Process,Device Performa - •
Nobel Laureates
Dr. Hiroshi Amano
1960 | Born in the city of Hamamatsu, Shizuoka Prefecture |
1979 | Graduated from Shizuoka Prefectural Hamamatsu Nishi Senior School |
1983 | Graduated from the School of Engineering, Nagoya University |
1985 | Completed Master's Course of the Graduate School of Engineering, Nagoya University |
1988 | Completed All But Dissertation (ABD) for a PhD degree of the Graduate School of Engineering, Nagoya University |
1988 | Research Associate, School of Engineering, Nagoya University |
1989 | Acquired the Doctor of Engineering, Nagoya University |
1992 | Assistant Professor, Faculty of Science and Technology, Meijo University |
1998 | Associate Professor, Faculty of Science and Technology, Meijo University |
2002 | Professor, Faculty of Science and Technology, Meijo University |
2010 | Professor, Graduate School of Engineering, Nagoya University |
Starting Point for Blue Luminescent Devices
Regardless of the various efforts of researchers on nitride semiconductors throughout the world, the following s
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